GA250TD120U Vishay, GA250TD120U Datasheet - Page 4

• Manufacturer Part Number: GA250TD120U
• Description: IGBT FAST 1200V 250A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA250TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 250A
• Current - Collector (ic) (max): 250A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 44.517nF @ 30V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Double INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: VS-GA250TD120U; VS-GA250TD120U; VSGA250TD120U; VSGA250TD120U

GA250TD120U
Fig. 4 - Maximum Collector Current vs. Case
4
300
250
200
150
100
0 . 0 1
50
0.1
0
0 . 0 0 0 1
1
25
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
D = 0.5 0
C
0.2 0
0 .05
0.0 2
0.0 1
0.10
Temperature
75
0 . 0 0 1
(TH ER M A L RE SP O N SE )
100
SING L E PU LS E
t , R ectangu la r Pulse Du ra tion (se c)
°
125
1
0 . 0 1
150
Fig. 5 - Typical Collector-to-Emitter Voltage
4.0
3.0
2.0
1.0
-60 -40 -20

V
80 us PULSE WIDTH
0.1
GE
vs. Junction Temperature
= 15V
Notes:
1. Duty factor D = t / t
2. Peak T = P
T , Junction Temperature ( C)
J
0
J
20
DM
40
x Z
1
60
1
thJC
2
P
DM
80 100 120 140 160
+ T
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I =

I =

I =
C
C
C
C
t
1
t 2
500
250
125
°
A
A
A
1 0
A