GA250TS60U Vishay, GA250TS60U Datasheet - Page 6
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GA250TS60U
Manufacturer Part Number
GA250TS60U
Description
IGBT FAST 600V 250A INT-A-PAK
Manufacturer
Vishay
Datasheet
1.GA250TS60U.pdf
(10 pages)
Specifications of GA250TS60U
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 250A
Current - Collector (ic) (max)
250A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
23.4nF @ 30V
Power - Max
780W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Not Compliant
Other names
VS-GA250TS60U
VS-GA250TS60U
VSGA250TS60U
VSGA250TS60U
VS-GA250TS60U
VSGA250TS60U
VSGA250TS60U
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GA250TS60U
Manufacturer:
SanRex
Quantity:
1 000
Part Number:
GA250TS60U
Quantity:
59
Part Number:
GA250TS60U
Quantity:
56
GA250TS60U
1 0 0 0
6
1 0 0
Fig. 13 - Typical Forward Voltage Drop vs.
1 0
70
60
50
40
30
20
10
Fig. 11 - Typical Switching Losses vs.
0
1.0
0
R
F o rw a rd V o lta g e D ro p - V
R
T
V
V
CC
GE
G
G1
J
Instantaneous Forward Current
Collector-to-Emitter Current
=15 ;R
I
2.0
= 125 C
= 360V
= 15V
C
= 15Ohm
, Collector-to-emitter Current (A)
100
°
3.0
G2
= 0
200
T = 2 5 °C
T = 1 2 5 °C
4.0
J
J
5.0
FM
300
(V )
6.0
400
500
Fig. 14 - Typical Stored Charge vs. di
7 0 0
6 0 0
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
2 0 0 0 0
1 5 0 0 0
1 0 0 0 0
5 0 0 0
0
0
V
0
V
V
T
5 0 0
CE
G E
J
C E
G E
V
Fig. 12 - Reverse Bias SOA
m easured at term inal (Peak Voltage)
measured at terminal (Peak Voltage)
CE
= 125°C
= 20V
1 0 0
I = 50 0A
I = 25 0A
I = 12 5 A
, Collector-to-Emitter Voltage (V)
F
F
F
SAFE OPERATING AREA
2 0 0
1 0 0 0
d i /dt - (A /µs)
3 0 0
f
4 0 0
V = 36 0V
T = 1 25 °C
T = 2 5°C
R
J
J
www.irf.com
1 5 0 0
5 0 0
6 0 0
f
/dt
2 0 0 0
7 0 0
A