GA400TD60U Vishay, GA400TD60U Datasheet - Page 2

• Manufacturer Part Number: GA400TD60U
• Description: IGBT FAST 600V 400A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA400TD60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 40.136nF @ 30V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA400TD60U
Electrical Characteristics @ T
Dynamic Characteristics - T
V
V
V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
rr
rr
fe
V
(BR)CES
CE(on)
GE(th)
FM
on
off (1)
ts (1)
ies
oes
res
g
gc
rr
(rec)
GE(th)
2
M
/dt
/ T
J
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Collector-to-Emitter Leaking Current
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
= 125°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
— 40136 —
—
—
—
—
— 16292 —
—
1806 2709
1033
2509
1641
481
251
612
335
688
225
522
232
141
1.7
1.8
-11
3.7
3.6
26
48
74
—
—
—
—
—
500
376
918
2.4
6.0
2.0
—
—
—
—
20
—
—
89
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
mA
A/µs
nA
nC
mJ
nC
V
S
V
pF
ns
ns
A
V
V
V
I
V
V
V
I
I
V
V
I
T
R
I
V
V
V
V
ƒ = 1 MHz
I
R
R
V
di/dt=1300A/µs
C
F
F
C
C
C
J
GE
GE
GE
CE
CE
GE
GE
GE
CC
CC =
GE
GE
CC
CC =
G1
G1
G2
= 400A, V
= 400A, V
= 2.5mA
= 270A ,V
= 400A
= 400A
= 25°C
= V
= 25V, I
= 0V, I
= 15V, I
= 15V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15 , R
= ±15V
= 0V
= 30V
= 15
= 0
360V
360V
GE
, I
C
CE
CE
GE
C
C
C
C
GE
Conditions
GE
Conditions
= 1mA
G2
= 2.5mA
= 400A
= 400A
= 400A, T
= 600V
= 600V, T
= 0V, T
= 15V
= 0V
= 0 ,
www.irf.com
J
J
= 125°C
J
= 125°C
= 125°C