GA75TS120U Vishay, GA75TS120U Datasheet - Page 3

• Manufacturer Part Number: GA75TS120U
• Description: IGBT FAST 1200V 75A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA75TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 12.815nF @ 30V
• Power - Max: 390W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

www.irf.com
1000
100
10
80
70
60
50
40
30
20
10
0
1.0
0.1
Fig. 2 - Typical Output Characteristics
S q u a re w a v e :
V

CE
T = 125 C
J
60 % of ra ted
, Collector-to-Emitter Voltage (V)
Id e a l d io d e s
I
vo ltag e
1.5
°

Fig. 1 - Typical Load Current vs. Frequency
V
80µs PULSE WIDTH
GE
2.0

T = 25 C
= 15V
J
(Load Current = I
1
°
f, Frequency (KHz)
2.5
RMS
of fundamental)
1000
100
0.1
10
1
Fig. 3 - Typical Transfer Characteristics
4.0
10

V
T = 125 C
J
GE
5.0
, Gate-to-Emitter Voltage (V)
GA75TS120U
°
F o r b o th :
D u ty c y c le : 5 0 %
T = 1 2 5 ° C
T
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n =
J
sink
= 9 0 ° C
6.0

T = 25 C
J

V
80µs PULSE WIDTH
CE
°
83
= 25V
7.0
W
100
3
8.0