50MT060WH Vishay, 50MT060WH Datasheet - Page 3

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50MT060WH

Manufacturer Part Number
50MT060WH
Description
IGBT WARP 600V 114A MTP
Manufacturer
Vishay
Datasheet

Specifications of 50MT060WH

Igbt Type
PT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 100A
Current - Collector (ic) (max)
114A
Current - Collector Cutoff (max)
400µA
Input Capacitance (cies) @ Vce
7.1nF @ 30V
Power - Max
658W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
12-MTP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*50MT060WH
VS-50MT060WH
VS-50MT060WH
VS50MT060WH
VS50MT060WH
Thermal- Mechanical Specifications
www.irf.com
T
T
R
R
T
Wt
(3) Standard version only i.e. without optional thermistor
(4) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
100
STG
J
thJC
thCS
10
compound. Lubricated threads
1
0.1
Vge = 15V
20µs Pulse Width
Parameters
Operating Junction
Temperature Range
Storage Temperature Range
Junction-to-Case
Case-to-Sink
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance
between two terminals)
Creepage
surface of the insulating material between 2 terminals
Mounting torque to heatsink
Weight
V
Fig. 1 - Typical Output Characteristics
CE
, Collector-to-Emitter Voltage (V)
T = 150˚C
J
(3)
(3)
(
(
shortest distance along the external
external shortest distance in air
1
T = 25˚C
J
IGBT, Diode
Thermistor
IGBT
Diode
Module
(4)
)
10
Min
- 40
- 40
- 40
5.5
8
120
100
80
60
40
20
0
25
Fig. 2 - Maximum Collector Current vs. Case
3 ± 10%
Typ
0.06
66
50
T
C
, Case Temperature (°C)
Max
0.38
150
125
125
Temperature
0.8
75
I27120 rev. D 02/03
100
50MT060WH
Units
°C/ W
m m
Nm
°C
125
g
150
3

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