FMS7G10US60 Fairchild Semiconductor, FMS7G10US60 Datasheet - Page 35
FMS7G10US60
Manufacturer Part Number
FMS7G10US60
Description
IGBT 600V 10A 25PM-AA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMS6G10US60.pdf
(214 pages)
Specifications of FMS7G10US60
Configuration
Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 10A
Current - Collector (ic) (max)
10A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
0.71nF @ 30V
Power - Max
66W
Input
Three Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
25PM-AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMS7G10US60
Manufacturer:
ARTESYN
Quantity:
1 000
Part Number:
FMS7G10US60
Quantity:
55
- Current page: 35 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
TO-252 (DPAK) (Continued)
FDD6612A
FQD60N03L
HUF76121D3S
ISL9N327AD3ST
FDD6630A
HUF76107D3S
FDD6632
FDD6688S
FDD6676S
FDD6644S
FDD6670S
FDD6680S
FDD6690S
RFD16N05LSM
RFD14N05LSM
RFD14N05SM9A
HUF75329D3S
HUFA75329D3S
HUF75321D3S
HUFA75321D3S
HUF75309D3S
HUFA75309D3S
HUFA75307D3S
RFD16N06LESM
RFD4N06LSM
FDD10AN06A0
FDD14AN06LA0
FDD13AN06A0
FDD5670
FDD24AN06LA0
FDD20AN06A0
FDD5680
HUF76429D3S
HUFA76429D3S
HUFA75429D3ST
FDD5690
HUF76423D3S
HUFA76423D3S
FDD45AN06LA0
HUF76419D3S
Products
Min. (V)
BV
30
30
30
30
30
30
30
30
30
30
30
30
30
50
50
50
55
55
55
55
55
55
55
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
DSS
Config.
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0051
0.0085
0.0167
0.0105
0.0116
0.0135
0.023
0.023
0.027
0.035
0.006
0.009
0.011
0.026
0.026
0.036
0.036
0.015
0.019
0.021
0.023
0.023
0.025
0.027
0.032
0.032
0.036
0.037
10V
0.02
0.09
0.07
0.07
0.09
0.02
0.1
–
–
–
–
R
DS(ON)
0.0146@5V
0.027@6V
0.034@6V
0.018@6V
0.024@5V
0.025@6V
0.032@6V
0.045@5V
0.0063
0.0071
0.0125
0.0245
0.028
0.033
0.104
0.017
0.047
0.047
0.027
0.027
0.037
0.037
0.043
4.5V
0.03
0.04
0.05
0.01
0.1
0.6
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-30
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Replaced by FDD6630A
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.7
2.6
8.3
18
13
17
58
41
25
17
17
17
61
31
40
50
32
21
21
11
11
51
28
25
22
49
16
15
33
38
38
36
23
28
28
23
5
9
6
= 5V
I
D
30
30
20
20
21
88
78
66
64
55
40
16
14
14
20
20
20
20
19
19
15
16
50
50
50
48
36
45
38
20
20
20
30
20
20
22
20
9
4
(A)
MOSFETs
P
D
128
128
135
125
115
110
110
125
36
45
75
50
28
15
69
70
57
70
60
50
60
48
48
93
93
55
55
45
90
30
70
75
90
60
50
85
85
55
75
(W)
Related parts for FMS7G10US60
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: