FMG1G100US60H Fairchild Semiconductor, FMG1G100US60H Datasheet - Page 94

• Manufacturer Part Number: FMG1G100US60H
• Description: IGBT MOLDING 600V 100A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG1G100US60H

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 10.84nF @ 30V
• Power - Max: 400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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Bipolar Power Transistors – Horizontal Deflection Output Transistors
TO-220F NPN Configuration
FJPF6806D
TO-264 NPN Configuration
FJL6820
FJL6825
FJL6920
TO-3PF NPN Configuration
BU508AF
FJAF6806D
FJAF6808D
FJAF6810
FJAF6810D
FJAF6812
FJAF6815
FJAF6820
FJAF6910
FJAF6916
FJAF6920
Products
V
CBO
1500
1500
1500
1700
1500
1500
1500
1500
1500
1500
1500
1500
1700
1700
1700
(V) V
CEO
750
750
750
800
700
750
750
750
750
750
750
750
800
800
800
(V) V
EBO
6
6
6
6
5
6
6
6
6
6
6
6
6
6
6
(V)
I
C
20
25
20
10
10
12
15
20
10
16
20
6
5
6
8
(A)
P
C
200
200
200
40
60
50
50
60
60
60
60
60
60
60
60
(W)
Min
4
6
6
6
2
4
5
5
5
5
5
6
7
6
6
Max
10
–
7
9
9
9
7
8
8
8
8
8
9
9
9
2-89
Discrete Power Products –
@I
h
FE
4.5
8.5
11
12
11
10
11
11
C
4
4
5
6
6
8
6
(A)
@V
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
Typ (V) Max (V) @I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5
3
3
3
1
5
5
3
3
3
3
3
3
3
3
Bipolar Transistors and JFETs
V
CE (sat)
4.5
11
12
11
10
11
10
11
C
4
4
5
6
6
8
6
(A) @I
2.75
2.75
2.75
2.75
1.2
1.5
2.5
1.5
1.5
2.5
B
1
3
2
1
2
(A)
t
STG
3
3
3
3
–
3
3
3
3
3
3
3
4
4
3
(µs) t
F
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.3
0.3
0.2
(µs)
–