APTGT100SK60TG Microsemi Power Products Group, APTGT100SK60TG Datasheet
APTGT100SK60TG
Specifications of APTGT100SK60TG
Related parts for APTGT100SK60TG
APTGT100SK60TG Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT100SK60TG V ® I Application • AC and DC motor control • Switched Mode Power Supplies ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT100SK60TG = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 100A T = 150°C C ...
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... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGT100SK60TG R T: Thermistor temperature 25 Thermistor value at T ...
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... Eon Gate Resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 0.0001 APTGT100SK60TG =15V) GE 200 T J 175 150 125 T =150°C J 100 2.5 3 Energy losses vs Collector Current ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT100SK60TG Forward Characteristic of diode 200 ...