APTGT150A60TG Microsemi Power Products Group, APTGT150A60TG Datasheet
APTGT150A60TG
Specifications of APTGT150A60TG
Related parts for APTGT150A60TG
APTGT150A60TG Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT150A60TG V ® I Application • Welding converters NT C2 • Switched Mode Power Supplies • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT150A60TG = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 150A T = 150°C C ...
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... Thermistor value at T T − 25 IGBT Diode To Heatsink ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : www.microsemi.com APTGT150A60TG Min Typ Max Unit 50 kΩ K 3952 Min Typ Max Unit 0.31 °C/W 0.52 2500 V -40 175 ° ...
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... Reverse Bias Safe Operating Area 350 Eon 300 Eoff 250 200 150 100 =150° IGBT Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT150A60TG Output Characteristics V =19V = 150° =13V GE V =15V GE V =9V GE 0.5 1 1.5 2 2.5 3 3 300V Eoff = 15V = 3.3Ω ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT150A60TG Forward Characteristic of diode 300 ...