APTGT200SK60TG Microsemi Power Products Group, APTGT200SK60TG Datasheet - Page 4

• Manufacturer Part Number: APTGT200SK60TG
• Description: IGBT 600V 290A 625W SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT200SK60TG

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 200A
• Current - Collector (ic) (max): 290A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 12.3nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
400
350
300
250
200
150
100
400
350
300
250
200
150
100
16
12
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
50
50
8
4
0
0.2
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
Eon
C
CE
GE
J
= 200A
= 150°C
0.9
Output Characteristics (V
= 300V
0.7
0.5
=15V
0.3
0.1
T
2
0.05
0.5
J
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6
=150°C
Transfert Characteristics
Gate Resistance (ohms)
T
T
J
4
J
=125°C
7
=125°C
T
1
J
=25°C
0.0001
6
V
8
V
T
CE
Eoff
T
1.5
J
GE
=25°C
J
=25°C
(V)
(V)
T
8
9
J
=25°C
2
10
10
GE
T
Er
Eon
J
=15V)
=150°C
2.5
Rectangular Pulse Duration in Seconds
0.001
12
11
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14
12
3
Single Pulse
0.01
500
400
300
200
100
400
350
300
250
200
150
100
14
12
10
APTGT200SK60TG
50
8
6
4
2
0
0
0
0
0
0
V
V
R
T
V
T
R
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
CE
GE
J
G
GE
J
J
= 150°C
50 100 150 200 250 300 350 400
G
=150°C
= 2Ω
0.1
=2Ω
100
= 150°C
0.5
= 300V
= 15V
=15V
200 300 400 500
1
Output Characteristics
1.5
V
I
GE
C
V
V
=19V
(A)
CE
CE
(V)
1
(V)
2
V
GE
IGBT
2.5
=15V
Eoff
V
GE
V
Eon
=13V
GE
600
3
=9V
Er
10
700
3.5
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