APTGT50DA170D1G Microsemi Power Products Group, APTGT50DA170D1G Datasheet - Page 2

• Manufacturer Part Number: APTGT50DA170D1G
• Description: IGBT 1700V 70A 310W D1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50DA170D1G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 70A
• Current - Collector Cutoff (max): 6mA
• Input Capacitance (cies) @ Vce: 4.4nF @ 25V
• Power - Max: 310W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Thermal and package characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Torque
BV
V
V
V
T
T
T
T
R
T
I
I
C
C
E
CE(on)
Wt
GE(th)
V
Q
T
CES
GES
T
d(off)
T
T
d(off)
T
E
T
d(on)
d(on)
ISOL
STG
thJC
res
off
ies
CES
C
F
rr
J
r
f
r
f
r
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn Off Energy
Diode Forward Voltage
Reverse Recovery Energy
Reverse Recovery Charge
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
All ratings @ T
APT website – http://www.advancedpower.com
j
= 25°C unless otherwise specified
V
Test Conditions
I
V
I
V
di/dt =990A/µs
I
V
di/dt =990A/µs
Test Conditions
V
V
I
V
V
Test Conditions
V
f = 1MHz
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
C
C
C
F
F
F
For terminals
GE
To Heatsink
G
G
GE
GE
GE
GE
GE
GE
Bus
GE
Bus
GE
R
R
= 50A
= 50A
= 50A
= 50A
= 50A
= 50A
= 22Ω
= 22Ω
= 900V
= 900V
= 0V, V
= 0V
= 0V, I
= 15V
= V
= 20V, V
= 0V, V
= 15V
= 15V
= 900V
= 900V
CE
, I
C
CE
CE
= 2.5mA
C
CE
= 1700V
= 2.5mA
= 25V
= 0V
T
T
T
T
T
T
T
T
APTGT50DA170D1
j
j
j
j
j
j
j
j
= 25°C
Diode
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
IGBT
M5
M6
3500
Min
Min
1700
Min
Min
-40
-40
-40
5.2
2
3
4400
Typ
Typ
Typ
Typ
150
200
100
750
230
100
850
115
1.8
1.9
2.0
2.4
5.8
16
19
30
90
22
9
Max
0.40
0.70
Max
Max
Max
150
125
125
180
600
3.5
2.2
2.4
6.4
5
6
Unit
°C/W
Unit
N.m
Unit
Unit
mA
mJ
µC
°C
nA
mJ
pF
V
ns
ns
V
V
V
V
g
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