APTGT50SK120D1G Microsemi Power Products Group, APTGT50SK120D1G Datasheet - Page 2
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APTGT50SK120D1G
Manufacturer Part Number
APTGT50SK120D1G
Description
IGBT 1200V 75A 270W D1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT50SK120D1G.pdf
(3 pages)
Specifications of APTGT50SK120D1G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
3.6nF @ 25V
Power - Max
270W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APTGT50SK120D1G
Manufacturer:
APT
Quantity:
1 000
Part Number:
APTGT50SK120D1G
Quantity:
50
Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Symbol Characteristic
Symbol Characteristic
Thermal and package characteristics
Symbol Characteristic
Torque
V
BV
V
V
T
T
T
T
R
T
I
I
C
C
E
E
CE(on)
Wt
GE(th)
V
Q
T
CES
GES
T
d(off)
T
T
d(off)
T
T
d(on)
d(on)
ISOL
STG
thJC
off
rec
ies
rss
CES
C
F
rr
J
r
f
r
f
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
Forward Voltage
Reverse Recovery Energy
Reverse Recovery Charge
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
All ratings @ T
APT website – http://www.advancedpower.com
j
= 25°C unless otherwise specified
V
Test Conditions
V
V
I
V
V
Test Conditions
V
f = 1MHz
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
V
I
I
V
di/dt =990A/µs
I
V
di/dt=990A/µs
C
C
C
F
F
F
For terminals
GE
To Heatsink
G
G
GE
GE
GE
GE
GE
GE
Bus
GE
Bus
GE
R
R
= 50A
= 50A
= 50A
= 50A
= 50A
= 50A
= 18Ω
= 18Ω
= 600V
= 600V
= 0V, V
= 0V, I
=15V
= V
= 20V, V
= 0V,V
= 15V
= 15V
= 0V
= 600V
= 600V
CE
, I
C
CE
CE
= 2mA
C
CE
= 25V
= 1200V
= 2mA
= 0V
T
T
T
T
T
T
T
APTGT50SK120D1
j
j
j
j
j
j
j
= 25°C
= 25°C
= 25°C
Diode
= 125°C
= 125°C
= 125°C
= 125°C
IGBT
M5
M6
2500
1200
Min
Min
Min
-40
-40
-40
1.4
5.0
2
3
3600
Typ
Typ
Typ
160
150
550
130
180
100
650
180
1.7
2.0
5.8
6.5
1.6
1.6
5.2
9.4
90
4
Max
0.45
0.75
Max
Max
150
125
125
180
400
3.5
2.1
6.5
2.2
5
5
Unit
°C/W
Unit
Unit
N.m
mA
nA
µC
°C
mJ
mJ
pF
ns
ns
V
V
V
V
V
g
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