VDI75-06P1 IXYS, VDI75-06P1 Datasheet

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VDI75-06P1

Manufacturer Part Number
VDI75-06P1
Description
MOD IGBT BUCK 600V ECO-PAC2
Manufacturer
IXYS
Datasheets

Specifications of VDI75-06P1

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 75A
Current - Collector (ic) (max)
69A
Current - Collector Cutoff (max)
800µA
Input Capacitance (cies) @ Vce
2.8nF @ 25V
Power - Max
208W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
ECO-PAC2
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
R
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
IGBTs
C25
C80
CM
CES
GES
SC
d(on)
r
d(off)
f
S18
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
ies
thJC
thJH
A1
VIO
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
= 1 mA; V
= 75 A; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= ±15 V; R
= 0 V; V
= 25 V; V
CE
GE
K10
X16
E2
CES
CES
= 300 V; I
= 15/0 V; R
L9
; V
;
GE
GE
GE
GE
GE
= 15 V; T
VII
= ± 20 V
= V
G
V
= ±15 V; R
= 0 V; f = 1 MHz
= 22 Ω; T
GE
C
CE
= 40 A
G
= 0 V; T
in ECO-PAC 2
X13
X15
VJ
= 22 Ω
T
NTC
= 125°C
VJ
VJ
= 25°C
= 125°C
VJ
G
T
= 22 Ω; T
= 125°C
VJ
VJ
(T
= 25°C
= 125°C
L9
F1
VJ
= 25°C, unless otherwise specified)
VID
VJ
= 125°C
NTC
X15
min.
X16
4.5
Characteristic Values
Maximum Ratings
300
T16
L9
typ.
2.3
2.8
1.8
1.4
2.8
1.2
50
55
30
± 20
V
600
100
208
CES
69
48
10
VDI
max.
100
2.8
6.5
0.8 mA
4.4 mA
0.6 K/W
NTC
K/W
X15
X16
mJ
mJ
nA
nF
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
I
V
V
Features
• NPT IGBT's
• FRED diodes
• Industry Standard Package
Advantages
• space and weight savings
• reduced protection circuits
• leads with expansion bend for stress relief
Typical Applications
• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters
Recommended replacement:
Please contact your local
sales office
VDI 75-06P1 VII 75-06P1
VID 75-06P1 VIO 75-06P1
C25
- positive temperature coefficient of
- fast switching
- fast reverse recovery
- low forward voltage
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
CES
CE(sat) typ.
saturation voltage
= 69 A
= 600 V
= 2.3 V
Pin arangement see outlines
1 - 4
B3

Related parts for VDI75-06P1

VDI75-06P1 Summary of contents

Page 1

... E off MHz ies (per IGBT) thJC R with heatsink compound (0.42 K/m.K; 50 µm) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved VID L9 NTC X15 L9 T16 NTC X16 F1 Maximum Ratings 600 ± 125°C ...

Page 2

... Strike distance in air (Pin to heatsink) A Weight Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved Maximum Ratings 56 35 Characteristic Values min. ...

Page 3

... Fig. 3 Typ. transfer characteristics 300 Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 150 120 I C 11V = 25°C 9V 42T60 42T60 42T60 120 nC 160 Q G VDI 75-06P1 VII 75-06P1 ...

Page 4

... Fig. 9 Typ. turn on energy and switching 120 Ω 125° 100 200 300 400 Fig. 11 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 100 t d(on off 300 ± Ω R ...

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