IXFN140N20P IXYS, IXFN140N20P Datasheet - Page 3

MOSFET N-CH 200V 115A SOT227B

IXFN140N20P

Manufacturer Part Number
IXFN140N20P
Description
MOSFET N-CH 200V 115A SOT227B
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXFN140N20P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
115A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
680W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
115 A
Power Dissipation
680 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
115
Rds(on), Max, Tj=25°c, (?)
0.018
Ciss, Typ, (pf)
7500
Qg, Typ, (nc)
240
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
680
Rthjc, Max, (ºc/w)
0.22
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN140N20P
Manufacturer:
ERICSSON
Quantity:
1 000
Part Number:
IXFN140N20P
Quantity:
132
© 2006 IXYS All rights reserved
140
120
100
140
120
100
3.5
2.5
1.5
0.5
80
60
40
20
80
60
40
20
0
4
3
2
1
0
0
0
0
V
GS
I
D
= 15V
Fig. 3. Output Characte r is tics
Fig. 5. R
= 70A V alue vs . Dr ain Cur re nt
50
Fig. 1. Output Characte r is tics
1
0.5
100
2
V
DS(on)
V
I
V
D
D S
GS
GS
V
1
@ 150
V
- A mperes
D S
@ 25
GS
= 10V
= 10V
- V olts
Nor m alize d to
150
9V
8V
- V olts
= 10V
3
9V
8V
º
5V
º
7V
6V
C
C
1.5
200
5V
7V
6V
4
T
T
J
J
2
= 175
250
= 25
5
º
º
C
C
300
2.5
6
300
270
240
210
180
150
120
2.5
1.5
0.5
80
70
60
50
40
30
20
10
90
60
30
0
0
3
2
1
-50
-50
Fig. 2. Exte nde d Output Characte r is tics
0
Fig. 4. R
V alue vs . Junction Te m pe r atur e
-25
-25
V
1
GS
Fig . 6. Dr ain Cur r e n t vs . Cas e
= 10V
2
0
V
0
T
DS(on
GS
T
C
J
- Degrees Centigrade
3
- Degrees Centigrade
25
= 10V
25
T e m p e r atu r e
)
Norm alize d to I
V
@ 25
4
50
D S
50
IXFN 140N20P
I
5
D
- V olts
º
= 140A
75
C
75
6
100
6V
100
9V
8V
7V
7
D
125
125
I
D
= 70A
8
= 70A
150
150
9
175
175
10

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