IXFN100N50P IXYS, IXFN100N50P Datasheet - Page 2

• Manufacturer Part Number: IXFN100N50P
• Description: MOSFET N-CH 500V 90A SOT-227B
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFN100N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 49 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 20000pF @ 25V
• Power - Max: 1040W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.049 Ohms
• Forward Transconductance Gfs (max / Min): 80 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 90 A
• Power Dissipation: 1.04 KW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.049
• Ciss, Typ, (pf): 20000
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1040
• Rthjc, Max, (ºc/w): 0.12
• Package Style: SOT-227B
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q3394492

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Notes:
Test current I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
RM
d(on)
r
d(off)
f
rr
one or moreof the following U.S. patents:
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
T
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
I
V
F
F
= 50 A
GS
R
DS
GS
GS
G
GS
= I
= 25A, -di/dt = 100 A/µs
= 100V
= 0 V
= 20 V; I
= 10 V, V
= 1 Ω (External)
= 10 V, V
S
= 0 V, V
, V
GS
= 0 V, Note 1
D
DS
DS
DS
= I
= 25 V, f = 1 MHz
4,850,072
4,881,106
= 0.5 V
= 0.5 V
T
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
(T
(T
= I
= I
J
J
T
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
T
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Min.
Min.
50
Characteristic Values
Characteristic Values
1700
Typ. Max.
Typ. Max.
0.05
140
110
240
0.6
6.0
6,162,665
6,259,123 B1
6,306,728 B1
80
20
36
29
26
96
78
0.12 ° C/W
100
250
200
1.5
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
SOT-227B Outline
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFN 100N50P