IXFN230N20T IXYS, IXFN230N20T Datasheet - Page 2

• Manufacturer Part Number: IXFN230N20T
• Description: MOSFET N-CH 230A 200V SOT-227
• Manufacturer: IXYS
• Series: GigaMOS™r

Specifications of IXFN230N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 220A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 378nC @ 10V
• Input Capacitance (ciss) @ Vds: 28000pF @ 25V
• Power - Max: 1090W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 220
• Rds(on), Max, Tj=25°c, (?): 0.0075
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 378
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 1090
• Rthjc, Max, (k/w): 0.138
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
-di/dt = 100A/µs
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= 60A, V
= 115A, V
= 75V
= 10V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
= 0V
ADVANCE TECHNICAL INFORMATION
GS
DS
D
GS
DS
DS
= 0V, Note 1
= 60A, Note 1
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 100A
= 115A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
100
Min.
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
2540
Typ.
0.05
160
310
104
378
125
Typ.
0.74
10.6
28
41
35
29
86
0.138 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
230
920
200 ns
1.3
°C/W
nC
nC
nC
µC
nF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B (IXFN) Outline
6,727,585
6,771,478 B2 7,071,537
(M4 screws (4x) supplied)
IXFN230N20T
7,005,734 B2
7,063,975 B2
7,157,338B2