IXFN280N085 IXYS, IXFN280N085 Datasheet - Page 5

• Manufacturer Part Number: IXFN280N085
• Description: MOSFET N-CH 85V 280A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN280N085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 280A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 580nC @ 10V
• Input Capacitance (ciss) @ Vds: 19000pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0044 Ohms
• Drain-source Breakdown Voltage: 85 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 280 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 280
• Rds(on), Max, Tj=25°c, (?): 0.0044
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 580
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 700
• Rthjc, Max, (ºc/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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10,000
1,000
100
10
1
1
External-Lead Limit
R
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
DS(on)
J
C
= 150ºC
= 25ºC
Limit
@ T
V
DS
- Volts
C
10
= 25ºC
100
100µs
1ms
10ms
100ms
DC
10,000
1,000
100
10
1
1
External-Lead Limit
R
Fig. 13. Forward-Bias Safe Operating Area
T
T
Single Pulse
DS(on)
J
C
= 150ºC
= 75ºC
Limit
V
@ T
DS
- Volts
C
10
= 75ºC
IXFN280N085
IXYS REF: F_280N085(9Y-N17)12-02-08-A
100
25µs
100µs
1ms
10ms
100ms
DC