IXTN60N50L2 IXYS, IXTN60N50L2 Datasheet - Page 5

• Manufacturer Part Number: IXTN60N50L2
• Description: MOSFET N-CH 53A 500V SOT-227
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTN60N50L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 610nC @ 10V
• Input Capacitance (ciss) @ Vds: 24000pF @ 25V
• Power - Max: 735W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 53
• Rds(on), Max, Tj=25°c, (?): 0.10
• Ciss, Typ, (pf): 24000
• Qg, Typ, (nc): 610
• Trr, Typ, (ns): 980
• Pd, (w): 735
• Rthjc, Max, (k/w): 0.17
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1,000.0
100.0
10.0
1.0
0.1
10
R
DS(on)
T
T
Single Pulse
Fig. 13. Forward-Bias Safe Operating Area
J
C
= 150ºC
= 25ºC
Limit
V
@ T
DS
- Volts
C
100
= 25ºC
DC
25µs
100µs
1ms
10ms
100ms
1000
1,000.0
100.0
10.0
1.0
0.1
10
R
Fig. 14. Forward-Bias Safe Operating Area
T
T
Single Pulse
DS(on)
J
C
= 150ºC
= 75ºC
Limit
@ T
V
DS
- Volts
C
100
IXTN60N50L2
= 75ºC
DC
IXYS REF: T_60N50L2(9R)01-20-09-C
25µs
100µs
1ms
10ms
100ms
1000