APT40N60JCU2 Microsemi Power Products Group, APT40N60JCU2 Datasheet

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APT40N60JCU2

Manufacturer Part Number
APT40N60JCU2
Description
MOSFET N-CH 600V 40A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT40N60JCU2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
3.9V @ 1mA
Gate Charge (qg) @ Vgs
259nC @ 10V
Input Capacitance (ciss) @ Vds
7015pF @ 25V
Power - Max
290W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT40N60JCU2
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Absolute maximum ratings
Symbol
IF
R
V
IF
V
E
E
I
I
P
DSon
ISOTOP
I
DM
AR
RMS
DSS
AR
AS
D
GS
A V
D
MOSFET Power Module
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
G
Super Junction
G
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
ISOTOP
S
®
Boost chopper
D
K
S
Parameter
K
D
www.microsemi.com
Duty cycle=0.5
Application
Features
Benefits
V
R
I
D
DSS
DSon
= 40A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
-
-
-
-
ISOTOP
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
= 600V
= 70mΩ max @ Tj = 25°C
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
T
T
T
Tc = 80°C
c
c
c
= 25°C
= 80°C
= 25°C
®
Package (SOT-227)
APT40N60JCU2
DSon
Max ratings
1800
±20
600
120
290
40
30
70
20
30
39
1
C
of V
CEsat
Unit
mΩ
mJ
W
V
A
V
A
A
1 – 8

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APT40N60JCU2 Summary of contents

Page 1

... Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive T • RoHS Compliant T = 25° 80° 25°C c Duty cycle=0 80°C www.microsemi.com APT40N60JCU2 DSon CEsat Max ratings Unit 600 120 ± mΩ 290 ...

Page 2

... T Rise Time r T Turn-off Delay Time d(off) T Fall Time f Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy APT40N60JCU2 = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 600V 125° 0V,V = 600V j ...

Page 3

... Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 0.0001 Fig 1, Maximum Effective transient thermal Impe dance, Junction to case vs Pulse Duration APT40N60JCU2 Test Conditions I = 30A 60A 30A T = 125° 600V T = 25° ...

Page 4

... T , Case Tem perature (°C) C Figure 6, DC Drain Current vs Case Temperature APT40N60JCU2 www.microsemi.com 4 – 8 ...

Page 5

... APT40N60JCU2 www.microsemi.com 5 – 8 ...

Page 6

... Typical Diode Performance Curve APT40N60JCU2 www.microsemi.com 6 – 8 ...

Page 7

... APT40N60JCU2 www.microsemi.com 7 – 8 ...

Page 8

... Cathode Source Dimensions in Millimeters and (Inches) www.microsemi.com APT40N60JCU2 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 25.2 (0.992) 25.4 (1.000) 0.75 (.030) 12.6 (.496) ...

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