APT10M11JVRU3 Microsemi Power Products Group, APT10M11JVRU3 Datasheet
APT10M11JVRU3
Specifications of APT10M11JVRU3
APT10M11JVRU3MI
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APT10M11JVRU3 Summary of contents
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... AR E Single Pulse Avalanche Energy AS IF Maximum Average Forward Current RMS Forward Current (Square wave, 50% duty) RMS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT10M11JVRU3 V = 100V DSS R = 11mΩ max @ Tj = 25°C DSon I = 142A @ Tc = 25°C D Application • ...
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... Reverse Recovery Time I Maximum Reverse Recovery Current RRM Q Reverse Recovery Charge rr t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Maximum Reverse Recovery Current RRM APT10M11JVRU3 = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 100V 125° 0V,V = 80V j ...
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... Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight Typical Performance Curve MOSFET APT10M11JVRU3 Min MOSFET Diode 2500 www.microsemi.com Typ Max Unit 0.28 °C/W 1. ...
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... APT10M11JVRU3 www.microsemi.com 4 – 7 ...
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... Typical Diode Performance Curve APT10M11JVRU3 www.microsemi.com 5 – 7 ...
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... APT10M11JVRU3 www.microsemi.com 6 – 7 ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT10M11JVRU3 W=4.1 (.161) W=4.3 (.169) H=4 ...