APT50N60JCCU2 Microsemi Power Products Group, APT50N60JCCU2 Datasheet
APT50N60JCCU2
Specifications of APT50N60JCCU2
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APT50N60JCCU2 Summary of contents
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... Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT50N60JCCU2 V = 600V DSS R = 45mΩ max @ Tj = 25°C DSon I = 50A @ Tc = 25°C D Application • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RM I Maximum Average Forward Current F(AV) V Diode Forward Voltage F Q Total Capacitive Charge C Q Total Capacitance APT50N60JCCU2 = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 600V 125° 0V,V = 600V ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT50N60JCCU2 CoolMos SiC Diode W=4 ...