APTM20DUM04G Microsemi Power Products Group, APTM20DUM04G Datasheet - Page 4
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APTM20DUM04G
Manufacturer Part Number
APTM20DUM04G
Description
MOSFET MOD DUAL COM SRC 200V SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTM20DUM04G.pdf
(7 pages)
Specifications of APTM20DUM04G
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 186A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
372A
Vgs(th) (max) @ Id
5V @ 10mA
Gate Charge (qg) @ Vgs
560nC @ 10V
Input Capacitance (ciss) @ Vds
28900pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
0.12
0.08
0.06
0.04
0.02
3000
2500
2000
1500
1000
1.2
1.1
0.9
0.8
0.1
500
0.00001
1
0
0
Low Voltage Output Characteristics
0
0
Normalized to
V
0.9
0.7
0.5
0.3
0.1
0.05
GS
V
=10V @ 186A
100
DS
4
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
, Drain to Source Voltage (V)
R
I
DS(on)
D
, Drain Current (A)
200
8
0.0001
vs Drain Current
12
V
300
GS
10V
=15V
16
400
9V
20
V
V
GS
8.5V
GS
500
0.001
=10V
=20V
24
8V
rectangular Pulse Duration (Seconds)
7.5V
6.5V
7V
600
28
www.microsemi.com
Single Pulse
0.01
1200
1000
400
350
300
250
200
150
100
800
600
400
200
50
0
DC Drain Current vs Case Temperature
0
25
0
APTM20DUM04G
V
250µs pulse test @ < 0.5 duty cycle
0.1
DS
V
1
GS
> I
T
Transfert Characteristics
50
, Gate to Source Voltage (V)
C
D
2
, Case Temperature (°C)
(on)xR
3
T
J
DS
=125°C
75
4
T
(on)MAX
J
=25°C
5
1
100
6
7
T
125
J
=-55°C
8
9 10
10
150
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