IXFN180N15P IXYS, IXFN180N15P Datasheet - Page 5

• Manufacturer Part Number: IXFN180N15P
• Description: MOSFET N-CH 150V 150A SOT-227B
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXFN180N15P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 7000pF @ 25V
• Power - Max: 680W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 150 A
• Power Dissipation: 680 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 150
• Rds(on), Max, Tj=25°c, (?): 0.011
• Ciss, Typ, (pf): 7000
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 680
• Rthjc, Max, (ºc/w): 0.22
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFN 180N15P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_180N15P (88) 03-23-06-C.xls