IXFN200N10P IXYS, IXFN200N10P Datasheet - Page 3

• Manufacturer Part Number: IXFN200N10P
• Description: MOSFET N-CH 100V 200A SOT-227B
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFN200N10P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 235nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 680W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 680 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0075
• Ciss, Typ, (pf): 7600
• Qg, Typ, (nc): 235
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 680
• Rthjc, Max, (ºc/w): 0.22
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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200
175
150
125
100
200
175
150
125
100
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
75
50
25
75
50
25
0
0
2
1
0
0
0
Fig. 5. R
V
V
GS
GS
0.2
0.5
50
Fig. 3. Output Characte r is tics
= 10V
= 15V - - - -
Fig. 1. Output Characte r is tics
V alue vs . Drain Curr e nt
DS(on)
0.4
100
1
V
V
I
0.6
Nor m alize d to I
V
GS
D
D S
V
GS
@ 150
150
1.5
D S
- A mperes
@ 25
= 10V
- V olts
= 10V
0.8
9V
- V olts
9V
200
º
º
C
C
2
1
6V
T
8V
7V
250
2.5
8V
J
7V
6V
5V
1.2
= 175
D
= 100A
T
J
= 25
300
º
1.4
3
C
º
C
350
1.6
3.5
12 0
10 0
350
300
250
200
150
100
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
8 0
6 0
4 0
2 0
50
0
0
2
1
-5 0
-50
Fig. 2. Exte nde d Output Characte r is tics
0
Fig. 4. R
Ex ternal Lead Current limit
V
0.5
V alue vs . Junction Te m pe r atur e
-2 5
-25
GS
Fig . 6. Dr ain C u r r e n t vs . C as e
= 10V
V
GS
1
0
0
T
DS(on
C
T
= 10V
1.5
J
- Degrees Centigrade
- Degrees Centigrade
25
25
)
T e m p e r atu r e
Norm alize d to I
V
@ 25
2
50
D S
50
I
D
2.5
= 200A
- V olts
º
C
75
75
IXFN 200N10P
3
9V
8V
6V
100
1 0 0
7V
3.5
I
D
D
= 100A
125
1 2 5
= 100A
4
150
1 5 0
4.5
175
1 7 5
5