STE30NK90Z STMicroelectronics, STE30NK90Z Datasheet - Page 5

• Manufacturer Part Number: STE30NK90Z
• Description: MOSFET N-CH 900V 28A ISOTOP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r
• Type: Power MOSFETr

Specifications of STE30NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4.5V @ 150µA
• Gate Charge (qg) @ Vgs: 490nC @ 10V
• Input Capacitance (ciss) @ Vds: 12000pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 210mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.21 Ohms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 28 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.26Ohm
• Drain-source On-volt: 900V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Package Type: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4336-5

STE30NK90Z
2.1
Table 6.
1. Pulse width limited by safe operating area%
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5
Table 7.
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
I
BV
V
SDM
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
GSO
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Source drain diode
Gate-source zener diode
Parameter
Parameter
Igs=± 1mA (Open
Drain)
I
I
V
(see Figure 16)
I
V
(see Figure 16)
SD
SD
SD
Test conditions
DD
DD
= 28 A, V
= 26 A, di/dt = 100 A/µs
= 26 A, di/dt = 100 A/µs
= 100 V, T
= 100 V, T
Test conditions
GS
j
j
= 25°C
= 150°C
= 0
Min.
30
Min.
Electrical characteristics
Typ.
Typ.
18.9
36.6
1.33
25.2
37.8
1
Max.
Max.
112
28
2
Unit
Unit
µC
µC
µs
µs
A
A
V
A
A
V
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