IXFN36N100 IXYS, IXFN36N100 Datasheet
IXFN36N100
Specifications of IXFN36N100
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IXFN36N100 Summary of contents
Page 1
... ± GSS DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2003 IXYS All rights reserved IXFN 36N100 Maximum Ratings 1000 = 1 MΩ 1000 GS ±20 ±30 36 144 ≤ DSS 700 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 Nm/lb.in. ...
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... Pulse test, t ≤ 300 μs, duty cycle d ≤ -di/dt = 100 A/μ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. , pulse test 18 ...
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... Figure 1. Output Characteristics 10V GS 2.0 T 1.8 1.6 1.4 1 1.0 0 Amperes D Figure 3. R normalized to 0.5 I DS(on) vs -50 - Degrees C C Figure 5. Drain Current vs. Case Temperature © 2003 IXYS All rights reserved 125 value D25 75 100 125 150 IXFN 36N100 50 V =10V 125 ...
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... U.S. patents: 30000 10000 1000 400 500 1.0 1.2 1 Pulse Width - Seconds IXFN36N100 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 IXFN 36N100 Ciss f = 100kHz Coss Crss 100 Volts DS Figure 8. Capacitance Curves ...