APT5010JLL Microsemi Power Products Group, APT5010JLL Datasheet - Page 2

• Manufacturer Part Number: APT5010JLL
• Description: MOSFET N-CH 500V 41A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT5010JLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 20.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 4360pF @ 25V
• Power - Max: 378W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
t
R
R
C
t
C
dv
C
V
Q
Q
Q
d(off)
E
E
d(on)
E
E
I
Q
t
SM
I
θJC
θJA
oss
t
t
SD
rss
S
iss
on
off
on
off
gd
rr
/
gs
r
f
g
rr
dt
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Peak Diode Recovery
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic
Junction to Case
Junction to Ambient
10
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.05
0.9
0.7
0.5
0.1
0.3
3
10
-4
dv
2
1
/
dt
(V
S
(Body Diode)
6
6
5
= -
GS
S
= -
41A
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
41A
, dl
, dl
S
S
/dt = 100A/µs)
= -
10
S
SINGLE PULSE
/dt = 100A/µs)
-3
41A
INDUCTIVE SWITCHING @ 125°C
)
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
DD
Test Conditions
DD
I
I
dv
device itself.
D
D
I
I
D
D
= 333V, V
/
= 330V, V
= 41A, R
= 41A, R
dt
V
V
= 41A @ 25°C
= 41A @ 25°C
V
V
V
R
V
f = 1 MHz
DD
DD
DS
GS
GS
numbers reflect the limitations of the test circuit rather than the
G
GS
= 0.6Ω
= 250V
= 250V
= 25V
= 15V
= 10V
= 0V
10
j
G
G
= +25°C, L = 1.90mH, R
GS
-2
GS
= 5Ω
= 5Ω
= 15V
I
= 15V
S
≤
-
I
D
41A
Note:
di
Peak T J = P DM x Z θJC + T C
/
dt
MIN
MIN
MIN
Duty Factor D = t 1 / t
≤ 700A/µs
10
-1
t 1
G
= 25Ω, Peak I
t 2
4360
11.0
TYP
TYP
895
485
455
755
530
TYP
608
60
95
24
50
11
13
25
3
V
R
2
≤
V
DSS
MAX
MAX
MAX
0.33
164
L
1.3
40
41
8
1.0
APT5010JLL
= 41A
T
J
≤ 150
Amps
UNIT
UNIT
Volts
UNIT
°C/W
V/ns
nC
µC
pF
ns
µ
ns
°
C
J