APT5010JFLL Microsemi Power Products Group, APT5010JFLL Datasheet - Page 4

• Manufacturer Part Number: APT5010JFLL
• Description: MOSFET N-CH 500V 41A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT5010JFLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 20.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 4360pF @ 25V
• Power - Max: 378W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
1500
1200
176
100
900
600
300
10
16
12
80
70
60
50
40
30
20
10
1
8
4
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
FIGURE 10, MAXIMUM SAFE OPERATING AREA
10
10
1
0
V
V
R
T
L = 100µH
FIGURE 14, DELAY TIMES vs CURRENT
T C =+25°C
T J =+150°C
SINGLE PULSE
V
R
T
L = 100µH
E
diode reverse recovery.
DS
DD
J
J
G
DD
G
ON
LIMITED BY R DS (ON)
= 125°C
= 125°C
OPERATION HERE
= 5Ω
= 5Ω
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 333V
= 333V
includes
20
20
20
= 41A
Q
g
V DS =250V
, TOTAL GATE CHARGE (nC)
40
V DS =100V
30
30
10
E
t
t
d(on)
d(off)
off
60
I
I
D
D
40
40
(A)
(A)
80
E
on
V DS =400V
50
50
100
100
60
60
120
140
500
70
70
10mS
100µS
1mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
1,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
2000
1500
1000
100
200
100
100
500
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
10
90
80
70
60
50
40
30
20
10
1
0
0
0.3
10
0
0
V
V
V
R
T
L = 100µH
V
I
T
L = 100µH
E
diode reverse recovery.
D
J
DS
SD
DD
G
T J =+150°C
J
DD
ON
= 125°C
= 41A
= 5Ω
= 125°C
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 333V
= 333V
includes
0.5
20
R
10
10 15 20 25 30
G
, GATE RESISTANCE (Ohms)
0.7
30
20
t
f
I
T J =+25°C
D
0.9
40
(A)
30
E
1.1
50
off
35 40 45 50
t
40
r
1.3
60
E
on
C iss
C oss
C rss
1.5
50
70