APT8030JVR Microsemi Power Products Group, APT8030JVR Datasheet - Page 3

• Manufacturer Part Number: APT8030JVR
• Description: MOSFET N-CH 800V 25A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT8030JVR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 510nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 450W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
100
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
80
60
40
20
25
20
15
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
5
0
-50
25
V
0
0
V
APT8030JVR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
@ <0.5 % DUTY CYCLE
-25
T
250 SEC. PULSE TEST
V
GS
J
V GS =5.5V, 6V, 7V, 10V & 15V
T
, JUNCTION TEMPERATURE ( C)
50
C
= 10V
D
T J = +125 C
100
, CASE TEMPERATURE ( C)
T J = +25 C
[Cont.]
2
0
25
75
T J = +125 C
T J = +25 C
T J = -55 C
200
50
4
100
75
4.5V
4V
5V
T J = -55 C
300
100 125 150
6
125
150
400
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
1.4
1.3
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
V GS =5.5V, 6V & 7V
= 10V @ 0.5 I
10
NORMALIZED TO
, JUNCTION TEMPERATURE ( C)
T
, DRAIN CURRENT (AMPERES)
C
, CASE TEMPERATURE ( C)
V GS =10V
4
0
0
20
DS
25
25
(ON) vs DRAIN CURRENT
D
[Cont.]
V GS =10V
30
50
50
8
V GS =15V
75
75 100 125 150
V GS =20V
40
100 125 150
12
4.5V
5V
4V
50
16
60