APT8024JLL Microsemi Power Products Group, APT8024JLL Datasheet - Page 3

• Manufacturer Part Number: APT8024JLL
• Description: MOSFET N-CH 800V 29A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT8024JLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 4670pF @ 25V
• Power - Max: 460W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
Junction
temp. (°C)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
30
25
20
15
10
0
5
0
-50
25
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
(watts)
Power
V DS > I D (ON) x R DS (ON)MAX.
V
FIGURE 4, TRANSFER CHARACTERISTICS
GS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
-25
T J = +125°C
V
T J = +25°C
I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
GS
T
2
50
= 14.5A
J
T
, JUNCTION TEMPERATURE (°C)
= 10V
C
0
, CASE TEMPERATURE (°C)
4
25
75
RC MODEL
50
6
0.0409
0.225
0.00361
100
75
T J = -55°C
8
100 125 150
125
10
0.0246F
0.406F
148F
150
12
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
80
70
60
50
40
30
20
10
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
-50
-50
0
0
V
V
DS
GS
FIGURE 5, R
-25
-25
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
NORMALIZED TO
= 10V @ I
10
T
5
I
J
D
T
, JUNCTION TEMPERATURE (°C)
, DRAIN CURRENT (AMPERES)
V GS =15 &10 V
C
0
0
, CASE TEMPERATURE (°C)
V GS =10V
10
20
D
25
DS
= 14.5A
25
(ON) vs DRAIN CURRENT
15
30
50
50
V GS =20V
75
75
20
40
100 125 150
100 125 150
8V
7.5V
50
25
6.5V
7V
5.5V
6V
APT8024JLL
30
60