APT10050JVR Microsemi Power Products Group, APT10050JVR Datasheet - Page 2

• Manufacturer Part Number: APT10050JVR
• Description: MOSFET N-CH 1000V 19A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10050JVR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 500nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 450W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
2
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL / PACKAGE CHARACTERISTICS
Symbol
Symbol
Symbol
V
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Torque
t
t
Isolation
R
R
C
C
V
C
Q
Q
Q
d(on)
d(off)
I
Q
t
I
SM
t
t
oss
SD
rss
S
iss
gs
gd
r
rr
f
JC
g
JA
rr
0.005
0.001
0.05
0.01
0.3
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
Maximum Torque for Device Mounting Screws and Electrical Terminations.
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.02
0.01
0.05
0.2
0.1
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
10
-4
3
SINGLE PULSE
1
2
(V
(Body Diode)
S
= -I
GS
S
= -I
= 0V, I
D[Cont.]
RECTANGULAR PULSE DURATION (SECONDS)
10
D[Cont.]
-3
, dl
S
= -I
, dl
S
/dt = 100A/ s)
D[Cont.]
S
/dt = 100A/ s)
10
I
I
)
D
D
3
4
Test Conditions
-2
V
V
= I
= I
See MIL-STD-750 Method 3471
Starting T
DD
DD
V
V
V
R
D[Cont.]
D[Cont.]
f = 1 MHz
V
DS
GS
GS
G
GS
= 0.5 V
= 0.5 V
= 0.6
= 25V
= 10V
= 15V
= 0V
j
@ 25 C
@ 25 C
= +25 C, L = 13.85mH, R
DSS
DSS
10
-1
Note:
Peak T J = P DM x Z JC + T C
2500
MIN
MIN
MIN
Duty Factor D =
1.0
t 1
G
= 25 , Peak I
t 2
6600
TYP
960
TYP
TYP
595
290
335
165
22
29
16
13
59
8
t 1
/ t 2
7900
MAX
0.28
APT10050JVR
MAX
MAX
830
430
500
250
1.3
40
13
45
32
26
90
16
19
76
L
10
= 19A
Amps
UNIT
UNIT
Volts
UNIT
Volts
lb•in
C/W
pF
nC
ns
ns
C