APT10050JVFR Microsemi Power Products Group, APT10050JVFR Datasheet - Page 2

• Manufacturer Part Number: APT10050JVFR
• Description: MOSFET N-CH 1000V 19A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10050JVFR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 500nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 450W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL / PACKAGE CHARACTERISTICS
1
2
Symbol
Symbol
Symbol
V
Torque
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
Isolation
I
R
C
R
C
d
d
V
dv
C
Q
Q
RRM
I
Q
Q
(on)
(off)
t
SM
t
I
t
θJC
oss
SD
θJA
rss
iss
S
rr
gs
gd
/
r
f
g
rr
dt
0.005
0.001
0.05
0.01
0.3
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
Maximum Torque for Device Mounting Screws and Electrical Terminations.
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
D=0.5
[Cont.],
[Cont.],
[Cont.],
0.02
0.01
0.05
0.2
0.1
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
10
di
di
di
/
/
/
-4
dt
dt
dt
3
= 100A/µs)
= 100A/µs)
= 100A/µs)
SINGLE PULSE
dv
1
2
/
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
10
-3
S
= -I
D
[Cont.])
I
I
10
D
D
3
4
5
Test Conditions
= I
= I
-2
V
V
See MIL-STD-750 Method 3471
Starting T
I
V
DD
DD
S
D
D
R
V
V
V
R
f = 1 MHz
V
- -I
[Cont.] @ 25°C
[Cont.] @ 25°C
DS
GS
GS
= 200V
G
GS
= 0.5 V
= 0.5 V
T
T
T
T
T
T
D
= 0.6ý
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
[Cont.],
= 0V
j
= +25°C, L = 13.85mH, R
DSS
DSS
10
di
-1
/
dt
= 100A/µs, V
Note:
Peak T J = P DM x Z θJC + T C
2500
MIN
MIN
MIN
Duty Factor D =
1.0
DD
t 1
G
- V
t 2
= 25ý, Peak I
6600
TYP
TYP
TYP
595
290
335
165
1.7
4.8
12
19
DSS
29
16
13
59
8
t 1
, T
/ t 2
j
- 150°C, R
APT10050JVFR
7900
MAX
MAX
0.28
MAX
830
430
500
250
300
600
1.3
40
13
45
32
26
90
16
19
76
18
L
10
= 19A
G
Amps
Amps
UNIT
UNIT
UNIT
°C/W
Volts
Volts
V/ns
= 2.0ý,
lb•in
nC
pF
µC
ns
ns