APT10043JVR Microsemi Power Products Group, APT10043JVR Datasheet - Page 3

• Manufacturer Part Number: APT10043JVR
• Description: MOSFET N-CH 1000V 22A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10043JVR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 430 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 480nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
50
40
30
20
10
25
20
15
10
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
5
0
-50
25
V
0
0
V
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
-25
T
V
GS
J
T J = +125°C
V GS =5.5V, 6V, 7V, 10V & 15V
T
, JUNCTION TEMPERATURE (°C)
100
50
C
= 10V
T J = +25°C
D
, CASE TEMPERATURE (°C)
[Cont.]
2
0
200
25
75
50
4
300
100
75
T J = -55°C
100 125 150
6
400
125
4.5V
5V
4V
150
500
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.3
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
V GS =5.5V, 6V, 7V, 10V & 15V
J
D
V GS =10V
= 10V @ 0.5 I
, JUNCTION TEMPERATURE (°C)
T
NORMALIZED TO
, DRAIN CURRENT (AMPERES)
10
C
4
, CASE TEMPERATURE (°C)
0
0
DS
25
25
20
(ON) vs DRAIN CURRENT
8
D
[Cont.]
50
50
12
30
75
75 100 125 150
V GS =20V
100 125 150
16
40
4.5V
5V
4V
20
50