APT50M50JVR Microsemi Power Products Group, APT50M50JVR Datasheet - Page 2

• Manufacturer Part Number: APT50M50JVR
• Description: MOSFET N-CH 500V 77A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT50M50JVR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 4V @ 5mA
• Gate Charge (qg) @ Vgs: 1000nC @ 10V
• Input Capacitance (ciss) @ Vds: 19600pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
2
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL / PACKAGE CHARACTERISTICS
Symbol
Symbol
Symbol
V
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Torque
t
t
Isolation
R
R
C
C
V
C
Q
Q
Q
d(on)
d(off)
I
Q
t
I
SM
t
t
oss
SD
rss
S
iss
gs
gd
r
rr
f
JC
g
JA
rr
0.0005
0.005
0.001
0.05
0.01
0.2
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
Maximum Torque for Device Mounting Screws and Electrical Terminations.
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.02
0.01
0.05
0.2
0.1
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
10
SINGLE PULSE
-4
3
1
2
(V
(Body Diode)
S
= -I
GS
S
= -I
= 0V, I
D[Cont.]
RECTANGULAR PULSE DURATION (SECONDS)
10
D[Cont.]
-3
, dl
S
= -I
, dl
S
/dt = 100A/ s)
D[Cont.]
S
/dt = 100A/ s)
10
I
I
)
D
D
3
4
Test Conditions
-2
V
V
= I
= I
See MIL-STD-750 Method 3471
Starting T
DD
DD
V
V
V
R
D[Cont.]
D[Cont.]
f = 1 MHz
V
DS
GS
GS
G
GS
= 0.5 V
= 0.5 V
= 0.6
= 25V
= 10V
= 15V
= 0V
j
@ 25 C
@ 25 C
= +25 C, L = 1.21mH, R
DSS
DSS
10
-1
Note:
Peak T J = P DM x Z JC + T C
2500
MIN
MIN
MIN
Duty Factor D =
1.0
t 1
G
= 25 , Peak I
16300 19600
t 2
2210
TYP
880
TYP
TYP
850
675
320
31
95
25
20
85
12
t 1
/ t 2
APT50M50JVR
3090
1275
1000
MAX
0.18
MAX
MAX
140
480
125
308
L
1.3
40
13
50
40
24
77
= 77A
10
Amps
UNIT
UNIT
Volts
UNIT
Volts
lb•in
C/W
pF
nC
ns
ns
C