APT20M11JVFR Microsemi Power Products Group, APT20M11JVFR Datasheet - Page 2

• Manufacturer Part Number: APT20M11JVFR
• Description: MOSFET N-CH 200V 175A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT20M11JVFR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 175A
• Vgs(th) (max) @ Id: 4V @ 5mA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 21600pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL /PACKAGE CHARACTERISTICS
1
2
Symbol
Symbol
Symbol
V
Torque
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
Isolation
I
R
R
C
C
d
d
dv
C
Q
V
Q
I
Q
RRM
Q
(on)
(off)
SM
t
I
t
t
oss
rss
SD
iss
S
rr
gd
/
gs
r
f
JC
JA
g
rr
dt
0.0005
0.005
0.001
0.05
0.01
0.2
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
Maximum Torque for Device Mounting Screws and Electrical Terminations.
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
D=0.5
[Cont.],
[Cont.],
[Cont.],
0.02
0.01
0.05
0.2
0.1
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
10
di
di
di
/
/
/
SINGLE PULSE
-4
dt
dt
dt
3
= 100A/ s)
= 100A/ s)
= 100A/ s)
dv
1
2
/
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
10
-3
S
= -I
D
[Cont.])
I
I
D
D
10
3
4
5
Test Conditions
= I
= I
-2
V
V
See MIL-STD-750 Method 3471
Starting T
I
V
DD
DD
S
D
D
R
V
V
V
R
f = 1 MHz
V
[Cont.] @ 25 C
[Cont.] @ 25 C
= 200V
DS
GS
GS
G
GS
= 0.5 V
= 0.5 V
-I
T
T
T
T
T
T
D
= 0.6
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 25 C
= 125 C
= 25 C
= 125 C
= 25 C
= 125 C
= 0V
[Cont.],
j
= +25 C, L = 235 H, R
DSS
DSS
10
di
-1
/
dt
= 100A/ s, V
Note:
Peak T J = P DM x Z JC + T C
2500
MIN
MIN
MIN
Duty Factor D = t 1 / t
DD
1.0
G
t 1
= 25 , Peak I
18000 21600
t 2
V
4100
1350
TYP
TYP
TYP
150
250
690
290
0.9
2.5
DSS
95
20
40
75
10
12
20
, T
2
j
APT20M11JVFR
150 C, R
L
5740
2025
1035
MAX
0.18
MAX
MAX
175
700
250
500
140
435
115
1.3
40
13
40
80
20
= 175A
5
10
G
Amps
Amps
UNIT
UNIT
UNIT
Volts
= 2.0 ,
Volts
V/ns
lb•in
C/W
nC
pF
ns
ns
C