APT30M17JFLL Microsemi Power Products Group, APT30M17JFLL Datasheet - Page 2

• Manufacturer Part Number: APT30M17JFLL
• Description: MOSFET N-CH 300V 135A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT30M17JFLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17 mOhm @ 67.5A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 135A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 230nC @ 10V
• Input Capacitance (ciss) @ Vds: 14100pF @ 25V
• Power - Max: 694W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
t
I
R
R
C
t
dv
C
V
C
Q
RRM
Q
Q
E
E
I
d(on)
d(off)
E
E
Q
SM
t
I
SD
θJC
θJA
oss
t
t
S
rr
/
iss
rss
off
off
gd
on
on
gs
r
rr
f
dt
g
0.20
0.16
0.12
0.08
0.04
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
10
S
S
S
= -135A,
= -135A,
= -135A,
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.9
0.5
0.05
0.7
0.3
0.1
di
di
di
/
/
/
dt
dt
dt
10
= 100A/µs)
= 100A/µs)
= 100A/µs)
-4
3
dv
1
2
/
dt
(Body Diode)
(V
5
6
6
GS
= 0V, I
10
RECTANGULAR PULSE DURATION (SECONDS)
-3
S
= -135A)
SINGLE PULSE
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
10
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
RESISTIVE SWITCHING
V
V
-2
Test Conditions
DD
DD
I
I
dv
device itself.
D
D
I
I
D
D
= 100A, R
= 100A, R
/
= 200V, V
= 200V, V
dt
= 135A @ 25°C
= 135A @ 25°C
V
V
V
V
V
R
f = 1 MHz
V
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
T
T
T
T
T
T
G
GS
j
j
j
j
j
j
= 0.6Ω
= 150V
=150V
= 25°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 25V
= 10V
= 15V
= 0V
j
= +25°C, L = .40mH, R
GS
GS
G
G
= 5Ω
= 5Ω
= 15V
= 15V
I
S
10
≤
-1
I
D
-
135A
Note:
di
Peak T J = P DM x Z θJC + T C
MIN
MIN
/
MIN
dt
Duty Factor D =
≤ 700A/µs
1.0
G
= 25Ω, Peak I
t 1
14100
3285
1120
1250
1325
1460
TYP
TYP
200
250
t 2
185
230
105
TYP
1.5
4.4
85
19
31
44
13
15
25
t 1
V
R
/ t 2
≤ 300
APT30M17JFLL
L
MAX
MAX
MAX
135
540
300
525
0.18
1.3
= 135A
40
8
10
T
J
≤ 150
Amps
Amps
UNIT
Volts
UNIT
V/ns
UNIT
°C/W
µC
nC
ns
pF
ns
µ
°
C
J