APL502J Microsemi Power Products Group, APL502J Datasheet - Page 3

• Manufacturer Part Number: APL502J
• Description: MOSFET N-CH 500V 52A SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APL502J

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 26A, 12V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 568W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: APL502JMI; APL502JMI

Typical Performance Curves
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
120
100
80
60
40
20
60
50
40
30
20
10
80
60
40
20
0
0
0
25
0
FIGURE 2, HIGH OUTPUT CHARACTERISTICS
0
V
V
V DS > I D (ON) x R DS (ON)MAX.
FIGURE 4, TRANSFER CHARACTERISTICS
DS
GS
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T J = +25°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T J = +125°C
, GATE-TO-SOURCE VOLTAGE (VOLTS)
V GS =10V, 15 V
T
50
50
2
C
, CASE TEMPERATURE (°C)
100
75
4
100
150
T J = -55°C
6
125
200
8
6.5 V
7.5 V
5.5 V
7 V
6 V
8 V
250
150
10
1.30
1.20
1.10
1.00
0.90
0.80
0.70
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
120
100
80
60
40
20
0
-50
0
0
FIGURE 3, LOW OUTPUT CHARACTERISTICS
V
DS
FIGURE 5, R
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T
V
V GS =10V
20
NORMALIZED TO
I
GS
J
D
5
, JUNCTION TEMPERATURE (°C)
, DRAIN CURRENT (AMPERES)
= 10V @ 26A
0
40
10
DS
(ON) vs DRAIN CURRENT
15
60
50
5.5 V
7.5 V
6.5 V
6 V
7 V
8 V
V GS =10, 15V
20
80
V GS =20V
100
100
25
120
150
30
APL502J