APTC80H15T3G Microsemi Power Products Group, APTC80H15T3G Datasheet - Page 5

• Manufacturer Part Number: APTC80H15T3G
• Description: MOSFET PWR MOD FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTC80H15T3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 3.9V @ 2mA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 4507pF @ 25V
• Power - Max: 277W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
100
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
10
Capacitance vs Drain to Source Voltage
-50
-50
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
T
V
J
DS
, Junction Temperature (°C)
, Drain to Source Voltage (V)
T
10
C
, Case Temperature (°C)
0
0
20
50
50
30
100
100
40
Coss
Crss
Ciss
150
150
50
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1000
16
14
12
10
100
8
6
4
2
0
10
Gate Charge vs Gate to Source Voltage
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
-50
I
T
limited by
R
Single pulse
T
T
D
J
J
C
=28A
DSon
Maximum Safe Operating Area
=25°C
ON resistance vs Temperature
APTC80H15T3G
=150°C
=25°C
V
I
V
D
GS
= 14A
DS
T
40
=10V
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
Gate Charge (nC)
0
10
80
100ms
50
V
120
DS
=400V
100
V
100
DS
160
V
=160V
DS
100µs
=640V
1ms
1000
150
200
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