APT60M75JVFR Microsemi Power Products Group, APT60M75JVFR Datasheet

APT60M75JVFR

Manufacturer Part Number

APT60M75JVFR

Description

MOSFET N-CH 600V 62A SOT-227

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT60M75JVFR.pdf (4 pages)

Specifications of APT60M75JVFR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

75 mOhm @ 31A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

62A

Vgs(th) (max) @ Id

4V @ 5mA

Gate Charge (qg) @ Vgs

1050nC @ 10V

Input Capacitance (ciss) @ Vds

19800pF @ 25V

Power - Max

700W

Mounting Type

Chassis Mount

Package / Case

SOT-227, miniBLOC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Lower Leakage

• Popular SOT-227 Package

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

Symbol

D(on)

DS(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

POWER MOS V

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Current

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of high voltage N-Channel enhancement

(Repetitive and Non-Repetitive)

APT Website - http://www.advancedpower.com

= V

= 25°C

> I

• Avalanche Energy Rated

•

= 25°C

FAST RECOVERY BODY DIODE

D(on)

, I

= ±30V, V

= 480V, V

= 600V, V

x R

= 5mA)

= 0V, I

FREDFET

DS(on)

= 10V, I

= 250µA)

Max, V

= 0V)

= 0V, T

= 0V)

= 31A)

All Ratings: T

= 10V)

= 125°C)

600V

= 25°C unless otherwise specified.

MIN

600

APT60M75JVFR

-55 to 150

62A 0.075Ω Ω Ω Ω Ω

3600

TYP

600

248

±30

±40

700

300

5.6

ISOTOP

0.075

±100

1000

MAX

250

"UL Recognized"

Ohms

Amps

Watts

Amps

UNIT

W/°C

UNIT

Volts

µA

°C

Related parts for APT60M75JVFR

APT60M75JVFR Summary of contents

Page 1

... ±30V 0V 5mA APT Website - http://www.advancedpower.com 62A 0.075Ω Ω Ω Ω Ω 600V ® ISOTOP = 25°C unless otherwise specified. C APT60M75JVFR 600 62 248 ±30 ±40 700 5.6 -55 to 150 300 62 50 3600 MIN TYP MAX 600 62 0.075 = 125°C) 1000 ± ...

Page 2

... T = 25° 125° 25° 125° See MIL-STD-750 Method 3471 4 Starting T ≤ 62A RECTANGULAR PULSE DURATION (SECONDS) APT60M75JVFR MIN TYP MAX 16500 19800 1900 2660 750 1125 700 1050 80 120 330 495 120 12 24 MIN TYP MAX 62 248 1.3 ...

Page 3

V GS =7V, 10V & 15V 6V 160 120 5. 4. 100 150 200 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 200 -55° ...

Page 4

... Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) APT60M75JVFR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150° =+25°C 0.4 0.6 0.8 1.0 1 ...

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