APT12040JFLL Microsemi Power Products Group, APT12040JFLL Datasheet - Page 2

• Manufacturer Part Number: APT12040JFLL
• Description: MOSFET N-CH 1200V 24A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT12040JFLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 275nC @ 10V
• Input Capacitance (ciss) @ Vds: 7247pF @ 25V
• Power - Max: 595W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
R
R
dv
I
C
t
t
V
C
C
Q
RRM
Q
Q
E
E
I
d(on)
d(off)
E
E
SM
t
Q
I
S
SD
rr
oss
t
t
/
iss
rss
on
off
on
off
gs
gd
r
rr
JC
f
dt
JA
g
0.25
0.20
0.15
0.10
0.05
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
10
S
S
S
-5
= -24A,
= -24A,
= -24A,
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.9
0.5
0.3
0.1
0.05
0.7
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
10
-4
3
dv
1
2
/
dt
(Body Diode)
(V
5
6
6
GS
= 0V, I
10
RECTANGULAR PULSE DURATION (SECONDS)
-3
S
= -24A)
SINGLE PULSE
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
10
V
RESISTIVE SWITCHING
V
Test Conditions
DD
-2
DD
dv
device itself.
I
I
D
D
I
I
D
D
/
= 800V, V
dt
= 800V, V
= 30A, R
= 30A, R
V
V
= 30A @ 25°C
= 30A @ 25°C
V
V
V
R
f = 1 MHz
V
DD
DD
numbers reflect the limitations of the test circuit rather than the
T
T
T
T
T
T
DS
GS
GS
G
GS
j
j
j
j
j
j
= 0.6
= 600V
= 600V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25V
= 10V
= 15V
= 0V
j
= +25°C, L = 11.11mH, R
G
G
GS
GS
= 5
= 5
I
= 15V
S
= 15V
10
-
-1
24A
di
/
dt
Note:
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
700A/µs
Duty Factor D =
1.0
t 1
G
= 25 , Peak I
7247
1102
1265
1147
2293
1411
t 2
TYP
TYP
TYP
200
275
179
2.0
9.0
32
21
14
67
24
15
28
V
R
t 1
/ t 2
1200
MAX
APT12040JFLL
MAX
MAX
375
860
0.21
1.3
24
96
18
40
L
10
T
J
= 24A
150
Amps
Amps
UNIT
Volts
°
V/ns
UNIT
UNIT
°C/W
µC
C
ns
nC
pF
ns
µ
J