APT12040JVFR Microsemi Power Products Group, APT12040JVFR Datasheet
APT12040JVFR
Manufacturer Part Number
APT12040JVFR
Description
MOSFET N-CH 1200V 26A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet
1.APT12040JVFR.pdf
(4 pages)
Specifications of APT12040JVFR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
4V @ 5mA
Gate Charge (qg) @ Vgs
1200nC @ 10V
Input Capacitance (ciss) @ Vds
18000pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT12040JVFR
Manufacturer:
APT
Quantity:
15 500
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
• Popular SOT-227 Package
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
V
I
E
E
D(on)
DS(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
POWER MOS V
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
1
(Repetitive and Non-Repetitive)
1
2
(V
DS
C
APT Website - http://www.advancedpower.com
DS
1
C
= 25°C
= V
• Avalanche Energy Rated
•
= 25°C
> I
4
GS
GS
FAST RECOVERY BODY DIODE
D(on)
2
DS
DS
, I
= ±30V, V
GS
®
D
(V
= V
= 0.8 V
x R
= 0V, I
= 5mA)
GS
DSS
FREDFET
DS(on)
= 10V, 0.5 I
, V
DSS
D
DS
= 250µA)
GS
Max, V
= 0V)
, V
= 0V)
GS
D[Cont.]
= 0V, T
GS
All Ratings: T
= 10V)
)
C
= 125°C)
1200V
C
®
= 25°C unless otherwise specified.
1200
MIN
26
2
APT12040JVFR
-55 to 150
26A 0.400Ω Ω Ω Ω Ω
1200
3600
TYP
104
±30
±40
700
300
5.6
26
26
50
ISOTOP
0.400
±100
1000
MAX
®
250
4
G
"UL Recognized"
Ohms
Amps
Watts
Amps
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
D
S
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APT12040JVFR Summary of contents
Page 1
... DS DSS GS = ±30V 0V 5mA APT Website - http://www.advancedpower.com 26A 0.400Ω Ω Ω Ω Ω 1200V ® ISOTOP ® = 25°C unless otherwise specified. C APT12040JVFR 1200 26 104 ±30 ±40 700 5.6 -55 to 150 300 26 50 3600 MIN TYP MAX 1200 26 ) 0.400 250 = 125°C) ...
Page 2
... T = 25° 125° 25° 125° See MIL-STD-750 Method 3471 4 Starting T ≤ 26A RECTANGULAR PULSE DURATION (SECONDS) APT12040JVFR MIN TYP MAX 15000 18000 1240 1730 640 960 800 1200 64 96 400 600 135 20 40 MIN TYP MAX 26 104 1.3 ...
Page 3
V GS =6V, 7V, 10V & 15V 4. 100 200 300 400 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS > (ON ...
Page 4
... Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) APT12040JVFR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150° =+25°C 0.4 0.6 0.8 1.0 1 ...