APTM10SKM05TG Microsemi Power Products Group, APTM10SKM05TG Datasheet - Page 6

• Manufacturer Part Number: APTM10SKM05TG
• Description: MOSFET N-CH 100V 278A SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM10SKM05TG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 125A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 278A
• Vgs(th) (max) @ Id: 4V @ 5mA
• Gate Charge (qg) @ Vgs: 700nC @ 10V
• Input Capacitance (ciss) @ Vds: 20000pF @ 25V
• Power - Max: 780W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
350
300
250
200
150
100
100
50
80
60
40
20
0
2.5
1.5
0.5
0
50
3
2
1
0
0
Operating Frequency vs Drain Current
V
R
T
L=100µH
0
V
D=50%
R
T
T
DS
J
G
=125°C
DS
J
C
=2.5Ω
V
R
T
L=100µH
G
=125°C
=75°C
=66V
=2.5Ω
Switching Energy vs Current
J
DS
G
=66V
=125°C
=2.5Ω
=66V
Delay Times vs Current
100
100
I
D
100
I
I
D
, Drain Current (A)
D
, Drain Current (A)
, Drain Current (A)
switching
Hard
200
150
200
E
off
ZCS
300
200
300
E
t
d(off)
off
t
d(on)
ZVS
E
on
400
400
250
www.microsemi.com
1000
100
250
200
150
100
10
5
4
3
2
1
0
50
1
APTM10SKM05TG
0
0.3
Switching Energy vs Gate Resistance
0
0
Source to Drain Diode Forward Voltage
V
I
T
L=100µH
D
DS
J
V
R
T
L=100µH
=200A
=125°C
V
J
DS
G
=66V
=125°C
SD
Rise and Fall times vs Current
=2.5Ω
0.5
=66V
5
, Source to Drain Voltage (V)
Gate Resistance (Ohms)
100
T
I
J
D
10
=150°C
0.7
, Drain Current (A)
T
0.9
200
15
J
=25°C
1.1
20
E
300
off
1.3
t
t
25
f
r
E
on
400
1.5
30
6 - 6