APTM100DA18TG Microsemi Power Products Group, APTM100DA18TG Datasheet - Page 5

• Manufacturer Part Number: APTM100DA18TG
• Description: MOSFET N-CH 1000V 43A SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100DA18TG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 372nC @ 10V
• Input Capacitance (ciss) @ Vds: 10400pF @ 25V
• Power - Max: 780W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
1.15
1.10
1.05
1.00
0.95
0.90
0.85
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
DS
T
J
, Drain to Source Voltage (V)
T
, Junction Temperature (°C)
10
C
, Case Temperature (°C)
0
0
25 50
25 50 75 100 125 150
20
30
75 100 125 150
40
Coss
Ciss
Crss
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50
1000
14
12
10
100
8
6
4
2
0
10
2.5
2.0
1.5
1.0
0.5
0.0
1
Gate Charge vs Gate to Source Voltage
0
APTM100DA18TG
-50 -25
1
I
T
D
limited by R
J
V
I
=43A
D
=25°C
Maximum Safe Operating Area
V
GS
=21.5A
T
DS
100
ON resistance vs Temperature
=10V
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
0
Gate Charge (nC)
DS
10
V
200
on
Single pulse
T
T
DS
25
J
C
=500V
=150°C
=25°C
50
V
300
DS
=200V
75 100 125 150
100
V
400
DS
100µs
=800V
10ms
1ms
1000
500
5 – 6