APTM20AM06SG Microsemi Power Products Group, APTM20AM06SG Datasheet - Page 5

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APTM20AM06SG

Manufacturer Part Number
APTM20AM06SG
Description
MOSFET MOD PHASE LEG SER/PAR SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM20AM06SG

Fet Type
2 N-Channel (Half Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.2 mOhm @ 150A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
300A
Vgs(th) (max) @ Id
5V @ 6mA
Gate Charge (qg) @ Vgs
325nC @ 10V
Input Capacitance (ciss) @ Vds
18500pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
100000
10000
1000
100
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
T
J
DS
, Junction Temperature (°C)
T
, Drain to Source Voltage (V)
10
C
, Case Temperature (°C)
0
0
25
25
20
50
50
30
75 100 125 150
75 100 125 150
40
Coss
Crss
Ciss
50
www.microsemi.com
10000
1000
100
10
12
10
2.5
2.0
1.5
1.0
0.5
0.0
1
8
6
4
2
0
Gate Charge vs Gate to Source Voltage
0
-50 -25
1
APTM20AM06SG
Single pulse
T
T
limited by
R
V
I
I
T
D
DSon
J
C
D
GS
= 150A
=150°C
V
J
ON resistance vs Temperature
Maximum Safe Operating Area
=25°C
=300A
T
=25°C
DS
=10V
60
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
0
Gate Charge (nC)
120
10
25
180
50 75 100 125 150
V
DS
100
240
=100V
V
DS
=40V
300
V
100µs
1ms
10ms
DS
=160V
1000
360
5 - 6

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