APTM100UM65DAG Microsemi Power Products Group, APTM100UM65DAG Datasheet - Page 4

• Manufacturer Part Number: APTM100UM65DAG
• Description: MOSFET N-CH 1000V 145A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100UM65DAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 145A
• Vgs(th) (max) @ Id: 5V @ 20mA
• Gate Charge (qg) @ Vgs: 1068nC @ 10V
• Input Capacitance (ciss) @ Vds: 28500pF @ 25V
• Power - Max: 3250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
0.035
0.025
0.015
0.005
1.4
1.3
1.2
1.1
0.9
0.8
360
320
280
240
200
160
120
0.04
0.03
0.02
0.01
80
40
1
0
0.00001
0
0
0
Low Voltage Output Characteristics
Normalized to
V
GS
V
=10V @ 72.5A
V
DS
0.05
0.5
GS
0.9
0.7
0.3
0.1
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5
, Drain to Source Voltage (V)
R
=10V
80
DS(on)
I
D
, Drain Current (A)
V
10
GS
vs Drain Current
0.0001
=15, 10V
V
GS
160
15
=20V
20
240
0.001
rectangular Pulse Duration (Seconds)
25
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6.5V
5.5V
7V
6V
5V
320
30
0.01
Single Pulse
APTM100UM65DAG
480
400
320
240
160
160
120
80
80
40
0
0
DC Drain Current vs Case Temperature
0
25
V
250µs pulse test @ < 0.5 duty cycle
DS
0.1
V
> I
1
GS
Transfert Characteristics
D
T
(on)xR
, Gate to Source Voltage (V)
50
C
, Case Temperature (°C)
2
T
J
DS
=125°C
(on)MAX
3
T
75
J
=25°C
4
1
100
5
T
J
6
=-55°C
125
7
10
150
8
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