IXFN360N10T IXYS, IXFN360N10T Datasheet - Page 3

• Manufacturer Part Number: IXFN360N10T
• Description: MOSFET N-CH 100V 360A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN360N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 360A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 505nC @ 10V
• Input Capacitance (ciss) @ Vds: 36000pF @ 25V
• Power - Max: 830W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 360
• Rds(on), Max, Tj=25°c, (?): 0.0026
• Ciss, Typ, (pf): 33000
• Qg, Typ, (nc): 525
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.18
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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220
200
180
160
140
120
100
360
320
280
240
200
160
120
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
40
80
60
40
20
0
0
-50
-50
0.0
Fig. 3. R
Fig. 5. Drain Current vs. Case Temperature
V
V
0.2
GS
GS
-25
-25
= 10V
= 15V
0.4
10V
8V
External Lead Current Limit
Fig. 1. Output Characteristics
0
0
DS(on)
0.6
vs. Junction Temperature
T
C
5V
T
7V
6V
0.8
25
25
- Degrees Centigrade
J
Normalized to I
- Degrees Centigrade
1.0
V
50
50
@ 25ºC
DS
1.2
- Volts
75
75
1.4
I
D
= 350A
100
100
1.6
D
= 180A Value
1.8
125
125
I
2.0
D
= 180A
150
150
2.2
175
175
2.4
280
240
200
160
120
360
320
280
240
200
160
120
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
40
80
40
0
0
3.4
0.0
0
Fig. 4. R
V
0.2
30
GS
3.8
= 10V
0.4
60
15V
Fig. 2. Output Characteristics
DS(on)
0.6
90
- - - -
Fig. 6. Input Admittance
4.2
120
0.8
V
vs. Drain Current
GS
Normalized to I
V
= 15V
150 180
1.0
I
GS
D
4.6
V
10V
@ 150ºC
9V
8V
DS
- Amperes
- Volts
1.2
- Volts
T
IXFN360N10T
J
= 150ºC
5.0
210 240
- 40ºC
1.4
25ºC
1.6
T
T
D
J
J
5.4
= 180A Value
= 175ºC
= 25ºC
270 300
1.8
IXYS REF: F_360N10T(2x7V)12-04-08
7V
6V
5V
2.0
5.8
330 360
2.2
6.2
2.4