IXFN48N50Q IXYS, IXFN48N50Q Datasheet
IXFN48N50Q
Manufacturer Part Number
IXFN48N50Q
Description
MOSFET N-CH 500V 48A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFN48N50Q.pdf
(4 pages)
Specifications of IXFN48N50Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
7000pF @ 25V
Power - Max
500W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
48 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
48
Rds(on), Max, Tj=25°c, (?)
0.10
Ciss, Typ, (pf)
6400
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
481
Rthjc, Max, (ºc/w)
0.26
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
ISOL
DSS
GS(th)
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
ISOL
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
TM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 1 mA
= 4 mA
, V
= 0.5 I
G
= 2 Ω
DS
g
t = 1 min
t = 1 s
, High dv/dt
= 0
D25
GS
= 1 MΩ
DD
(T
T
T
44N50
48N50
≤ V
J
J
J
= 25°C, unless otherwise specified)
DSS
= 25°C
= 125°C
,
IXFN 44N50Q
IXFN 48N50Q
JM
44N50
48N50
44N50
48N50
500
min.
2.0
-55 to +150
-55 to +150
Characteristic Values
1.5/13
1.5/13
Maximum Ratings
typ.
2500
3000
176
192
150
500
500
±20
±30
500
2.5
44
48
48
60
30
15
±100
100
120
100
Nm/lb.in.
Nm/lb.in.
max.
4.0
2
V/ns
mJ
mJ
°C
°C
°C
V~
V~
mA
W
nA
µA
V
V
V
V
A
A
A
A
A
g
V
V
Ω
Ω
500 V 44 A 120 mΩ Ω Ω Ω Ω
500 V 48 A 100 mΩ Ω Ω Ω Ω
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
t
V
rr
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
-faster switching
Unclamped Inductive Switching (UIS)
rated
Low R
Fast intrinsic diode
International standard package
miniBLOC with Aluminium nitride
isolation for low thermal resistance
Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
Molding epoxies meet UL 94 V-0
flammability classification
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
DSS
≤ ≤ ≤ ≤ ≤ 250 ns
E153432
DS (on)
I
D25
G
D = Drain
S
g
DS98715B(08/03)
D
process
R
DS(on)
S
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IXFN48N50Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved IXFN 44N50Q IXFN 48N50Q Maximum Ratings 500 = 1 MΩ 500 GS ±20 ±30 44N50 44 48N50 48 44N50 176 JM 48N50 192 48 60 2.5 ≤ V ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ 25A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. ...
Page 3
... Volts D S Fig Norm alized to I DS(on) Value vs 10V 3.1 GS 2.8 2.5 2.2 1.9 1.6 1 Amperes D © 2003 IXYS All rights reserved 120 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 D25 125º 25º ...
Page 4
... V - Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 5 25ºC J 0.8 0 ...