IXFE50N50 IXYS, IXFE50N50 Datasheet
IXFE50N50
Manufacturer Part Number
IXFE50N50
Description
MOSFET N-CH 500V 50A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFE50N50.pdf
(2 pages)
Specifications of IXFE50N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
330nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
500W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
47
Rds(on), Max, Tj=25°c, (?)
0.1
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
330
Trr, Typ, (ns)
-
Trr, Max, (ns)
180
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
ISOPLUS227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
HiPerFET
Power MOSFET
Single Die MOSFET
Preliminary data sheet
Symbol Test Conditions
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
(T
V
V
I
I
R
DM
D25
AR
GSS
DSS
JM
AR
J
stg
DSS
DGR
GS
GSM
D
ISOL
DSS
GS(th)
DS(on)
d
J
= 25°C, unless otherwise specified)
T
T
T
T
Continuous
Transient
T
T
I
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
V
V
V
V
Note 2
S
ISOL
C
C
J
J
C
J
C
GS
DS
GS
DS
GS
GS
C
= 25°C
= 25°C;
= 25°C
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20V, V
= V
= 0 V
= 10V, I
≤ 1 mA
Test Conditions
DM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
D
D
D
= 1mA
= 8mA
= I
GS
Note 1
TM
G
T
= 0V
= 2 Ω
t = 1 min
t = 1 s
GS
= 1MΩ
DD
≤ V
DSS
T
T
55N50
50N50
J
J
= 25°C
= 125°C
Min.
500
2.5
55N50
50N50
55N50
50N50
Characteristic Values
IXFE 55N50
IXFE 50N50
-40 ... +150
-40 ... +150
Typ.
Maximum Ratings
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
150
500
500
±20
±30
200
220
500
19
Max.
47
50
55
60
±200
5
100 m Ω
4.5
25
90 m Ω
2 mA
V/ns
mJ
°C
°C
°C
V~
V~
nA
µA
W
A
A
A
V
V
V
V
A
A
V
V
g
Features
•
•
•
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
ISOPLUS 227
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
500 V
500 V
t
Low cost direct-copper bonded
aluminium package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
2500V isolation
Low drain to case capacitance
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Conforms to SOT-227B outline
rr
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
V
≤ ≤ ≤ ≤ ≤ 250 ns
DSS
DS (on)
HDMOS
TM
50 A
47 A
I
G
(IXFE)
D25
D = Drain
TM
D
S
process
DS98904(04/03)
100 mΩ Ω Ω Ω Ω
90 mΩ Ω Ω Ω Ω
R
DS(on)
S
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IXFE50N50 Summary of contents
Page 1
... V = ±20V GSS DSS DS DSS 10V DS(on Note 2 © 2003 IXYS All rights reserved IXFE 55N50 IXFE 50N50 Maximum Ratings 500 500 ±20 ±30 55N50 50N50 55N50 200 50N50 220 ≤ DSS 500 -40 ... +150 150 -40 ... +150 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. ...
Page 2
... Notes: 1. Pulse width limited by T JM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 Test current: T IXFE55N50 27 IXFE50N50 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values Min. Typ. ...