IXFN60N80P IXYS, IXFN60N80P Datasheet
IXFN60N80P
Manufacturer Part Number
IXFN60N80P
Description
MOSFET N-CH 800V 53A SOT-227B
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFN60N80P.pdf
(4 pages)
Specifications of IXFN60N80P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
53A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
18000pF @ 25V
Power - Max
1040W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
53 A
Power Dissipation
1.04 KW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
53
Rds(on), Max, Tj=25°c, (?)
0.14
Ciss, Typ, (pf)
18000
Qg, Typ, (nc)
250
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1040
Rthjc, Max, (ºc/w)
0.12
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN60N80P
Manufacturer:
PANASONIC
Quantity:
6 000
Part Number:
IXFN60N80P
Quantity:
116
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
DS(on)
© 2006 IXYS All rights reserved
DSS
DGR
GSS
GSM
AR
AS
D
ISOL
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
S
ISOL
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
≤ 1 mA
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
= I
G
= 2 Ω
DS
T
, Note 1
= 0
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
t = 1 s
t = 1 min
DSS
IXFN 60N80P
JM
,
800
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
1040
2500
3000
800
800
±30
±40
250
100
150
300
53
30
20
30
5
±200
3000
140
Max.
5.0
25
V/ns
m Ω
mJ
nA
µA
µA
V~
V~
°C
°C
°C
°C
W
g
V
V
V
V
V
V
A
A
A
J
V
I
R
t
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
•
•
•
l
l
l
Advantages
l
l
l
D25
rr
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
E153432
G
≤ ≤ ≤ ≤ ≤ 140 mΩ Ω Ω Ω Ω
= 800
=
≤ ≤ ≤ ≤ ≤ 250 ns
S
D = Drain
53
D
DS99562E(02/06)
V
A
S
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IXFN60N80P Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS Note 1 DS(on © 2006 IXYS All rights reserved IXFN 60N80P Maximum Ratings 800 = 1 MΩ 800 GS ±30 ±40 53 250 JM 30 100 5 ≤ DSS 1040 -55 ... +150 150 -55 ... +150 300 min 2500 3000 1 Nm/lb.in. 1 Nm/lb.in. 30 Characteristic Values Min ...
Page 2
... I RM Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ Test current IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...
Page 3
... Volts DS Fig Normalized to I DS(on) vs. Drain Current 2 10V 2.6 GS 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved 120 = 10V GS 7V 100 3.2 = 10V GS 7V 2.8 2 1.6 1.2 5V 0.8 0 -50 = 30A Value 125º ...
Page 4
... T = 125º 0.3 0.4 0.5 0.6 0.7 0.8 0 Volts SD Fig. 11. Capacitance 100,000 MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 130 120 110 100 5.75 6 6.25 6.5 6. 25º 1.1 1.2 1 ...