IXFN73N30Q IXYS, IXFN73N30Q Datasheet
IXFN73N30Q
Manufacturer Part Number
IXFN73N30Q
Description
MOSFET N-CH 300V 73A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFN73N30Q.pdf
(4 pages)
Specifications of IXFN73N30Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
73A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
195nC @ 10V
Input Capacitance (ciss) @ Vds
5400pF @ 25V
Power - Max
500W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.045 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
73 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
73
Rds(on), Max, Tj=25°c, (?)
0.042
Ciss, Typ, (pf)
6400
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
481
Rthjc, Max, (ºc/w)
0.26
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN73N30Q
Manufacturer:
IXYS
Quantity:
1 560
© 2004 IXYS All rights reserved
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
ISOL
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
TM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 1 mA
= 4 mA
, V
= 0.5 I
G
= 2 Ω
DS
g
t = 1 min
t = 1 s
, High dv/dt
= 0
D25
GS
= 1 MΩ
DD
(T
T
T
≤ V
J
J
J
= 25°C, unless otherwise specified)
DSS
= 25°C
= 125°C
,
JM
300
min.
2.0
-55 to +150
-55 to +150
IXFN 73N30Q
Characteristic Values
1.5/13
1.5/13
Maximum Ratings
typ.
2500
3000
300
300
500
±30
±40
292
150
2.5
30
73
73
60
10
±100
max.
4.0
Nm/lb.in.
Nm/lb.in.
25
45 m Ω Ω Ω Ω Ω
2
V/ns
mJ
V~
V~
°C
°C
°C
mA
W
nA
µA
V
V
V
V
A
A
A
g
V
V
J
V
I
R
t
Features
•
•
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D25
rr
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
-faster switching
Unclamped Inductive Switching (UIS)
rated
Low R
Fast intrinsic diode
International standard package
miniBLOC with Aluminium nitride
isolation for low thermal resistance
Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
Molding epoxies meet UL 94 V-0
flammability classification
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
DSS
DS(on)
≤ ≤ ≤ ≤ ≤ 250 ns
E153432
DS (on)
= 300
=
=
G
73
45 mΩ Ω Ω Ω Ω
S
D = Drain
g
D
process
DS98742B(1/04)
V
A
S
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IXFN73N30Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXFN 73N30Q Maximum Ratings 300 = 1 MΩ 300 GS ±30 ±40 73 292 2.5 ≤ DSS 500 -55 to +150 150 -55 to +150 ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ 25A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. ...
Page 3
... DS Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Norm alized to I DS(on) Value vs 2.8 GS 2.5 2 25º 0 Amperes D © 2004 IXYS All rights reserved 2 D25 25º IXFN 73N30Q Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Norm alized to I Value vs. ...
Page 4
... Fig. 11. Capacitance 1 0000 C iss C 1 000 oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 25º 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 ...